Semiconductor package, manufacturing method of semiconductor device and semiconductor package

ABSTRACT

A manufacturing method of a semiconductor device includes the following steps. A semiconductor wafer having an active side and a back side opposite to the active side is provided. A plurality of conductive bumps are provided on the active side. A protection film is laminated on the active side, wherein the protection film includes a dielectric film covering the plurality of conductive bumps and a cover film covering the dielectric film. A thinning process is performed on the back side to form a thinned semiconductor wafer. The cover film is removed from the dielectric film. A singularization process is performed on the thinned semiconductor wafer with the dielectric film to form a plurality of semiconductor devices.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductor layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon. Many integratedcircuits are typically manufactured on a single semiconductor wafer. Thedies of the wafer may be processed and packaged at the wafer level, andvarious technologies have been developed for wafer level packaging.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 to FIG. 13 illustrate cross-sectional views of intermediatestages in the manufacturing of a semiconductor package according to someexemplary embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1 to FIG. 13 illustrate cross-sectional views of intermediatestages in the manufacturing of a semiconductor package according to someexemplary embodiments of the present disclosure. It is noted that thepresent disclosure will be described with respect to some embodiments ina specific context, namely an integrated fan-out package structure. Theconcepts in the disclosure may also apply, however, to othersemiconductor structures or circuits. A semiconductor package and themanufacturing method of forming the semiconductor package andsemiconductor device applicable for the semiconductor package structureare provided in accordance with various embodiments. The intermediatestages of forming the semiconductor package are illustrated inaccordance with some embodiments. The variations of the embodiments arediscussed. Throughout the various views and illustrative embodiments,like reference numbers are used to designate like elements.

With now reference to FIG. 1, in some embodiments, a semiconductor wafer10 is provided. In accordance with some embodiments of the disclosure,the semiconductor wafer 10 may include a partially fabricatedsemiconductor substrate 112 having an active side S1 and a back side S2opposite to the active side S1. Typically, wafer fabrication forsemiconductor devices is almost finished at this stage and the partiallyfabricated substrate is to be packaged into a final product. Forexample, the substrate 112 may include many partially fabricatedsemiconductor devices, each in a separate region separated by scribelines L1. Each of these separate regions becomes a die when the wafer issingularized, or diced, along the scribe lines L1.

In accordance with some embodiments of the disclosure, a plurality ofconductive bumps 114 are formed on the active side S1. In someembodiments, the conductive bumps 114 may be arranged into variouspatterns or arrays and may be of size from several microns to hundredsof microns or larger. A perspective view of a substrate 112 havingconductive bumps 114 formed thereon is shown as FIG. 1.

Referring to FIG. 1, the semiconductor wafer 10 is shown having theconductive bumps 114 formed thereon. The substrate 112 may includevarious embedded semiconductor metal and dielectric layers correspondingto circuitry and semiconductor devices, such as transistors, resistors,capacitors, and diodes (not shown). The circuitry and devices areelectrically connected to the conductive bumps 114. In some embodiments,the conductive bumps 114 may be formed by a plating or printing processand formed into a partial ball shape by heating the solder material.

With now reference to FIG. 2, a protection film 117 is laminated on theactive side S1 of the semiconductor wafer 10. In accordance with someembodiments of the disclosure, the protection film 117 may include adielectric film 116 and a cover film 115. In some embodiments, thedielectric film 116 covers the conductive bumps 114 and the cover film115 covers the dielectric film 116 as shown in FIG. 2. For example,materials of the dielectric film 116 may include a B-stage epoxy resinand a filler. In general, B-stage is a stage that can be achieved byutilizing heat or UV light to remove the majority of solvent from an(epoxy) adhesive, thereby allowing construction to be staged. In betweenadhesive application, assembly, and curing, the B-stage epoxy resin canbe held for a period of time, without sacrificing performance. In someembodiments, the dielectric film 116 may include reinforcing materialssuch as glass fabric, fiber paper, glass fiber paper, etc., which issoaked into resin (primarily epoxy resin), for example. In someembodiments, the dielectric film 116 contains more filler than a normaldielectric layer does. For example, a percentage of the filler in thedielectric film 116 is substantially from 50% to 80%.

In accordance with some embodiments of the disclosure, the cover film115 may be a release film, which provides protection to the dielectricfilm 116 and can be detached from the dielectric film 116 in the laterprocess. In one of the implementations, the protection film 117 may belaminated on the active side S1 by laminating the dielectric film 116 onthe active side S1 first, and then laminating the cover film 115 on thedielectric film 116. That is to say, the dielectric film 116 and thecover film 115 can be laminated on the active side S1 of thesemiconductor wafer 10 sequentially. In an alternative embodiment, thedielectric film 116 and the cover film 115 can be bonded together andlaminated on the active side S1 simultaneously by a roller, for example.The disclosure is not limited thereto.

In accordance with some embodiments of the disclosure, after theprotection film 117 is laminated on the active side S1 of thesemiconductor wafer 10, a curing or baking process may be performed onthe protection film 117 to cure the protection film 117. In someembodiments, a temperature of the curing process is substantially below200° C. to avoid melting of the conductive bumps 114. In one of theimplementations, the protection film 117 may be baked in a heatingchamber at a temperature between 130° C. and about 200° C. In accordancewith some embodiments of the disclosure, a plurality of nano-bubbles maybe induced during the curing process, Accordingly, the cured dielectricfilm 116 may include a plurality of nano-bubbles. In some embodiments, adiameter of each of the nano-bubbles is from about 10 nm to about 100nm.

With now reference to FIG. 3, a thinning process, which may be agrinding process, is performed on the back side S2 of the semiconductorwafer 10 to form a thinned semiconductor wafer 10 a. The back side S2 ofthe semiconductor wafer 10 may be ground to reduce the thicknessthereof. With the mechanical grinding, the semiconductor wafer 10 can beground to a thickness of about 50-100 μm, depending on the conditions.However, further reduction in the thickness of the semiconductor wafer10 by mechanical grinding may result in damage to the wafer. Therefore,to further reduce the thickness of the semiconductor wafer 10, it ispreferable to use a method less likely to cause damage during a process,such as wet chemical etching or chemical mechanical polishing (CMP), butthe disclosure is not limited thereto. It is noted that the thickness ofthe thinned semiconductor wafer 10 a can be set depending on the purposefor which the semiconductor package is used. During the thinningprocess, the semiconductor wafer 10 may be held by a handler from theside where the protection film 117 is attached. Hence the protectionfilm 117 protects the conductive bumps 114 from the handler. Thethinning process reduces the weight of the semiconductor devices formedfrom the thinned semiconductor wafer 10 a and such thinned semiconductordevices have important applications for some small portable devices.

In accordance with some embodiments of the disclosure, after thethinning process is performed on the back side S2, the thinnedsemiconductor wafer 10 a may then be flipped over and mounted on a framecarrier 20 with the active side S1 facing up. In some embodiments, theframe carrier 20 may include a dicing frame 21 and a dicing tape 22, butthe disclosure is not limited thereto. In some embodiments, the dicingframe 21 may be a sheet metal frame in a ring shape, for example, andthe dicing tape 22 is adhered to the thinned semiconductor wafer 10 a.

With now reference to FIG. 4, in some embodiments, the cover film 115can be removed by a peeling process. In some embodiments, the cover film115 may be directly peeled off from the dielectric film 116 without anyfurther treatments. In an alternative embodiment, the cover film 115 maybe peeled off after exposure of UV light or heat treatment for reducingadhesion of the cover film 115. For example, the cover film 115 may beexposed to UV light, so that the cover film 115 loses or reducesadhesion, and hence the cover film 115 can be peeled off from thedielectric film 116, but the disclosure is not limited thereto. Afterthe cover film 115 is removed, the dielectric film 116 of the protectionfilm 117 remains covering the conductive bumps 114.

With now reference to FIG. 5, in some embodiments, a singularizationprocess is performed on the thinned semiconductor wafer 10 a with thedielectric film 116 on top (hereinafter “wafer 10 a”), so as to form aplurality of semiconductor devices 110 a as shown in FIG. 5. Inaccordance with some embodiments of the disclosure, the wafer 10 a isthen diced in a manner along the scribe lines L1 to separate the wafer10 a into individual semiconductor devices 110 a. In some embodiments,the wafer 10 a is sawed by a mechanical or laser blade along the scribelines L1 between adjacent semiconductor devices 110 a. In someembodiments, the blade is sawed through the wafer 10 a and into thedicing tape 22, such that the semiconductor devices 110 a are separatedfrom one another while still attached to the frame carrier 20 by thedicing tape 22 and maintained on the frame carrier 20.

With now reference to FIG. 6, in some embodiments, at least one of theplurality of semiconductor devices 110 a is picked up from the framecarrier 20 and is placed on another carrier 160. In some embodiments,the carrier 160 may further include an adhesive layer 165. The carrier160 may be a glass carrier, a ceramic carrier, or the like. The adhesivelayer 165 may be a light to heat conversion release coating (LTHC), orthe like. In some embodiments, an insulation layer 170 a may beoptionally provided on the carrier 160, or on the adhesive layer 165 (ifany). In some embodiments, before the semiconductor device 110 a isdisposed on the carrier 160, a plurality of conductive pillars 130 maybe formed on the carrier 160, and the conductive pillars 130 surrounds adevice area A1 of the carrier 160 where the semiconductor device 110 ais disposed. In the present embodiment, the conductive pillars 130 areformed on the insulation layer 170 a located on the carrier 160, but thedisclosure is not limited thereto.

In accordance with some embodiments of the disclosure, the semiconductordevice 110 a formed by the process shown in FIG. 1 to FIG. 5 may includean active surface having a plurality of conductive bumps 114 and adielectric film 116 encapsulating the conductive bumps 114. In someembodiments, the materials of the dielectric film 116 may include anepoxy resin and a filler. In some embodiments, the dielectric film 116may include reinforcing materials such as glass fabric, fiber paper,glass fiber paper, etc., which is distributed in the resin (primarilyepoxy resin), for example. In some embodiments, the dielectric film 116contains more filler than a normal dielectric layer does. For example, apercentage of the filler in the dielectric film 116 is substantiallyfrom 50% to 80%. In accordance with some embodiments of the disclosure,the dielectric film 116 may include a plurality of nano-bubbles, and thediameter of each of the nano-bubbles is from about 10 nm to about 100nm, for example.

In some exemplary embodiments, the conductive bumps 114 (such as coppervias) may be formed on the active surface (e.g. the top surface) of thesemiconductor device 110 a and electrically coupled to the bond pads 113on the substrate 112 of the semiconductor device 110 a. The bond pads113 may be partially covered by a passivation layer, which may bepolyimide, a polymer adhesive, or other insulating buffer material. Theconductive bumps 114 are disposed on the bond pads 113 and fill theopening between the passivation layer. In some embodiments, thedielectric film 116 covers the active surface (e.g. the top surface) ofthe semiconductor device 110 a, and may cover the top surfaces of theconductive bumps 114. In other embodiments, the top surface of thedielectric film 116 may be substantially level with the top surfaces ofthe conductive bumps 114. In some embodiments, the top ends of theconductive pillars 130 may be substantially level with the top surfacesof the conductive bumps 114. In other embodiments, the top ends of theconductive pillars 130 may be substantially higher than the top surfacesof the conductive bumps 114. Alternatively, the top ends of theconductive pillars 130 may be substantially lower than the top surfacesof the conductive bumps 114 but substantially higher than the bottomsurfaces of the conductive bumps 114.

In accordance with some embodiments of the disclosure, the semiconductordevice 110 a may be logic device dies including logic circuits therein.In some exemplary embodiments, the semiconductor device 110 a may bedies that are designed for mobile applications, and may include a PowerManagement Integrated Circuit (PMIC) die and a Transceiver (TRX) die,for example. Although one semiconductor device 110 a is illustrated,more dies may be placed over the carrier 160 and level with one another.

With such configuration, the process of laminating the protection film117 on the active side S1 of the semiconductor wafer 10 not onlyprovides protection to the conductive bumps 114 during the thinningprocess, but also, after the cover film 115 is removed, the dielectricfilm 116 can function as a passivation layer for encapsulating theconductive bumps 114. Accordingly, processes of attaching a backsidegrinding tape and forming a passivation layer on the active side S1 ofthe semiconductor wafer 10 by spin coating, which is rather expensiveand time consuming, can be omitted. Thereby, the manufacturing processof the semiconductor device 110 a and the semiconductor package 100 canbe simplified, and material and production cost thereof can be saved. Inaddition, the curing temperature of the dielectric film 116 is ratherlow (e.g. below about 200° C.), so the issue of melting the conductivebumps 114 during the curing process can be avoided.

In some exemplary embodiments, the conductive pillars 130 may bepre-formed, and are then placed on the carrier 160. In alternativeembodiments, the conductive pillars 130 may be formed by, for example,plating process. The plating of the conductive pillars 130 may beperformed before the placement of the semiconductor device 110 a, andmay include forming a seed layer (not shown) over carrier 160, formingand patterning a photo resist layer (not shown), and plating theconductive pillars 130 on the portions of the seed layer that areexposed through the photo resist layer. The photo resist layer and theportions of the seed layer covered by the photo resist layer may then beremoved. The semiconductor device 110 a may then be placed over thecarrier 160. The material of the conductive pillars 130 may includecopper, aluminum, or the like. Accordingly, the bottom ends of theconductive pillars 130 are substantially level with the back surface ofthe semiconductor device 110 a.

With now reference to FIG. 7, in some embodiments, the semiconductordevice 110 a and the conductive pillars 130 on the carrier 160 areencapsulated by an encapsulating material 120. In other words, theencapsulating material 120 is provided on the carrier 160 to encapsulatethe conductive pillars 130 and the semiconductor device 110 a at thedevice area A1. In some embodiments, the encapsulating material 120fills the gaps between the semiconductor device 110 a and the conductivepillars 130, and may be in contact with the insulation layer 170 a. Theencapsulating material 120 may include a molding compound, an epoxy, ora resin, etc. In some embodiments, a top surface of the encapsulatingmaterial 120 may be higher than the top ends of the conductive pillars130 and the top surface of the dielectric layer 116 a. Namely, theencapsulating material 120 covers the top ends of the conductive pillars130 and the top surface of the dielectric layer 116 a. In someembodiments, the encapsulating material 120 and the dielectric film 116are two separate components, and the conductive bumps 114 are isolatedfrom the encapsulating material 120 by the dielectric film 116. In someembodiments, at least a part of the materials of the encapsulatingmaterial 120 and the dielectric film 116 are different from each other.

With now reference to FIG. 8, in some embodiments, a thinning process,which may be a grinding process, is performed to thin the encapsulatingmaterial 120 (and the dielectric film 116) until the top ends of theconductive pillars 130 and the top surfaces of the conductive bumps 114are revealed. The resulting structure is shown in FIG. 8. Due to thethinning process, the top ends of the conductive pillars 130 aresubstantially level with the top surfaces of the conductive bumps 114,and are substantially level with the top surface of the encapsulatingmaterial 120 and the top surface of the dielectric film 116 as shown inFIG. 8. In some embodiments, the thinning process may be implementedthrough mechanical grinding, wet chemical etching and/or chemicalmechanical polishing (CMP), but the disclosure is not limited thereto.

Throughout the description, the resultant structure including thesemiconductor device 110, the conductive pillars 130 and theencapsulating material 120 as shown in FIG. 8 is referred to asencapsulated semiconductor device 101, which may have a wafer form inthe process. Accordingly, in the encapsulated semiconductor device 101,the semiconductor device 110 is disposed at the die area A1, and the topsurface of the dielectric film 116 may be substantially level with andreveal the top surfaces of the conductive bumps 114. The conductivepillars 130 may extend through the encapsulated semiconductor device 101outside of the die area A1, and the encapsulating material 120encapsulates the semiconductor device 110 and the conductive pillars130. In other words, the encapsulating material 120 encapsulates thesemiconductor device 110 therein, and the conductive pillars (throughvias) 130 extends through the encapsulating material 120.

With now reference to FIG. 9, in some embodiments, a redistributionstructure 140 is provided over the encapsulating material 120 and thesemiconductor device 110. The redistribution structure 140 iselectrically connected to the semiconductor device 110 and theconductive pillars 130. In some embodiments, the redistributionstructure 140 is formed over the encapsulated semiconductor device 101to be electrically connected to the conductive bumps 114 of thesemiconductor device 110 and the conductive pillars 130. In someembodiments, the redistribution structure 140 may also interconnect theconductive bumps 114 and the conductive pillars 130. The redistributionstructure 140 may be formed by, for example, depositing conductivelayers, patterning the conductive layers to form redistribution circuits142, partially covering the redistribution circuits 142 and filling thegaps between the redistribution circuits 142 with dielectric layers 143,etc. The material of the redistribution circuits 142 may include a metalor a metal alloy including aluminum, copper, tungsten, and/or alloysthereof. The dielectric layers 143 may be formed of dielectric materialssuch as oxides, nitrides, carbides, carbon nitrides, combinationsthereof, and/or multi-layers thereof. The redistribution circuits 142are formed in the dielectric layers 143 and electrically connected tothe semiconductor device 110 and the conductive pillars 130. Inaddition, an under bump metallurgy (UBM) layer 144 may be formed on theredistribution structure 140 by sputtering, evaporation, or electrolessplating, etc.

With now reference to FIG. 10, in some embodiments, at least one ofelectrical connector 182 and at least one integrated passive device(IPD) 184 are disposed on the redistribution structure 140 in accordancewith some exemplary embodiments. The formation of the electricalconnectors 182 may include placing solder balls on the UBM layer 144 (oron the redistribution structure 140), and then reflowing the solderballs. In alternative embodiments, the formation of the electricalconnectors 182 may include performing a plating process to form solderregions on the UBM layer 144 (or on the redistribution structure 140),and then reflowing the solder regions. The electrical connector 182 mayalso include conductive pillars, or conductive pillars with solder caps,which may also be formed through plating. The IPD 184 may be fabricatedusing standard wafer fabrication technologies such as thin film andphotolithography processing, and may be mounted on the redistributionstructure 140 through, for example, flip-chip bonding or wire bonding,etc.

With now reference to FIG. 11, in some embodiments, the carrier 160 maybe removed. In some embodiments, the carrier 160 is detached from theencapsulated semiconductor device 101, and the insulation layer 170 a(if any), by causing the adhesive layer 165 to lose or reduce adhesion.The adhesive layer 165 is then removed along with the carrier 160. Forexample, the adhesive layer 165 may be exposed to UV light, so that theadhesive layer 165 loses or reduces adhesion, and hence the carrier 160and the adhesive layer 165 can be removed from the encapsulatedsemiconductor device 101.

With now reference to FIG. 11, in some embodiments, after the carrier160 is removed, the bottom ends of the conductive pillars 130 arerevealed. In the illustrated structure, the bottom ends of theconductive pillars 130 are level with the bottom surface of thesemiconductor device 110 and the bottom surface of the encapsulatingmaterial 120. In the embodiments of the insulation layer 170 a beingomitted, a grinding process may be performed to lightly grind the backsurfaces of the semiconductor device 110 and the encapsulating material120, and the bottom ends of the conductive pillars 130.

Alternatively, the grinding process may be skipped.

In the embodiments having the insulation layer 170 a, a patterningprocess may then be performed on the insulation layer 170 a to form aplurality of openings 172. Accordingly, the insulation layer 170 havinga plurality of openings 172 are formed. The openings 172 may be locatedon the conductive pillars 130 respectively to reveal the bottom ends ofthe conductive pillars 130. In some embodiments, the openings 172 may beformed by photolithography process, laser drilling process, etc. Then, aplurality of electrical terminals 190 may be formed on the encapsulatedsemiconductor device 101 to be electrically connected to the conductivepillars 130. In some embodiments, the electrical terminals 190 aredisposed in the openings 172 of the insulation layer 170 to be connectedto the conductive pillars 130. At the time, the manufacturing process ofa semiconductor package 100 may be substantially done.

With now reference to FIG. 11, in some embodiments, a second package 200may be mounted on and electrically connected to the first package 100through the electrical terminals 190. Accordingly, the resultingstructure as shown in FIG. 13 is a package on package structure. In someembodiments, the second package 200 may be packages, device dies,passive devices, and/or the like. In some embodiments, the package onpackage structure shown in FIG. 13 may combine vertically discretememory and logic packages, and the second package 200 may be employed ina memory such as a dynamic random access memory (DRAM) and others, butthe disclosure is not limited thereto.

In some embodiments, the bonding between the semiconductor package(first package) 100 and the second package 200 may be performed usingflip-chip bonding through the electrical terminals 190, which maycomprise solder, for example. In some embodiments, an underfill 240 maybe formed between the first package 100 and the second package 200 toencapsulate the electrical terminals 190. It is appreciated that thesemiconductor device 110 in the first package 100 and the semiconductordevice 220 in the second package 200 may be arranged differently than inthe illustrated exemplary embodiments. In some embodiments, thesemiconductor device 220 is encapsulated by the insulating encapsulation230. Then, the wafer-level package may then be sawed into a plurality ofpackage on package structures independent from one another, with each ofthe package on package structures including one second package 200bonded to one first package 100.

In sum, the protection film 117 including the dielectric film 116 andthe cover film 115 covering the dielectric film 116 is laminated on theactive side S1 of the semiconductor wafer 10. With such configuration,the protection film 117 not only provides protection to the conductivebumps 114 on the semiconductor wafer 10 during the thinning process, butalso, after the cover film 115 is removed, the dielectric film 116 canfunction as a passivation layer for encapsulating the conductive bumps114. Accordingly, processes such as attaching a backside grinding tapeand forming a passivation layer on the active side S1 of thesemiconductor wafer 10 by spin coating, which is rather expensive andtime-consuming, can be omitted. Thereby, the manufacturing process ofthe semiconductor device and the semiconductor package can besimplified, and material and production cost thereof can be saved. Inaddition, the curing temperature of the dielectric film 116 is ratherlow (e.g. below about 200° C.), so the issue of melting the conductivebumps 114 during the curing process can be avoided.

Based on the above discussions, it can be seen that the presentdisclosure offers various advantages. It is understood, however, thatnot all advantages are necessarily discussed herein, and otherembodiments may offer different advantages, and that no particularadvantage is required for all embodiments.

In accordance with some embodiments of the disclosure, a manufacturingmethod of a semiconductor device includes the following steps. Asemiconductor wafer having an active side and a back side opposite tothe active side is provided. A plurality of conductive bumps areprovided on the active side. A protection film is laminated on theactive side, wherein the protection film includes a dielectric filmcovering the plurality of conductive bumps and a cover film covering thedielectric film. A thinning process is performed on the back side toform a thinned semiconductor wafer. The cover film is removed from thedielectric film. A singularization process is performed on the thinnedsemiconductor wafer with the dielectric film to form a plurality ofsemiconductor devices.

In accordance with some embodiments of the disclosure, a manufacturingmethod of a semiconductor package includes the following steps. Asemiconductor wafer having an active side and a back side opposite tothe active side is provided. A plurality of conductive bumps areprovided on the active side. A protection film is laminated on theactive side. A thinning process is performed on the back side to form athinned semiconductor wafer. A part of the protection film is removedwhile another part of the protection film remains covering the pluralityof conductive bumps. A singularization process is performed on thethinned semiconductor wafer with the dielectric film to form a pluralityof semiconductor devices. One of the plurality of semiconductor devicesis disposed on a carrier. An encapsulating material is provided on thecarrier to encapsulate the one of the plurality of semiconductordevices. A redistribution structure is provided over the encapsulatingmaterial, wherein the redistribution structure is electrically connectedto the one of the plurality of semiconductor devices. The carrier isremoved.

In accordance with some embodiments of the disclosure, a semiconductorpackage includes a semiconductor device, an encapsulating material, anda redistribution structure. The semiconductor device includes an activesurface having a plurality of conductive bumps and a dielectric filmencapsulating the plurality of conductive bumps, wherein materials ofthe dielectric film include an epoxy resin and a filler. Theencapsulating material encapsulates the semiconductor device, whereinthe plurality of conductive bumps are isolated from the encapsulatingmaterial by the dielectric film. The redistribution structure isdisposed over the encapsulating material and the semiconductor device,wherein the redistribution structure is electrically connected to theplurality of conductive bumps.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A manufacturing method of a semiconductor device,comprising: providing a semiconductor wafer having an active side and aback side opposite to the active side; providing a plurality ofconductive bumps on the active side; laminating a protection film on theactive side, wherein the protection film comprises a dielectric filmsurrounding the plurality of conductive bumps and a cover film coveringthe dielectric film; performing a thinning process on the back side ofthe semiconductor wafer having the protection film laminated thereon toform a thinned semiconductor wafer; removing the cover film from thedielectric film on the thinned semiconductor wafer; and performing asingularization process on the thinned semiconductor wafer with theuncovered dielectric film to form a plurality of semiconductor devices,wherein a top surface of the uncovered dielectric film is level with topsurfaces of the plurality of conductive bumps.
 2. The manufacturingmethod of the semiconductor device as claimed in claim 1, furthercomprising: performing a curing process on the protection film after theprotection film is laminated on the active side.
 3. The manufacturingmethod of the semiconductor device as claimed in claim 2, wherein atemperature of the curing process is substantially below 200° C.
 4. Themanufacturing method of the semiconductor device as claimed in claim 1,wherein laminating the protection film on the active side comprises:laminating the dielectric film on the active side for surrounding theplurality of conductive bumps; and laminating the cover film on thedielectric film.
 5. The manufacturing method of the semiconductor deviceas claimed in claim 1, wherein the cover film is removed by a peelingprocess.
 6. The manufacturing method of the semiconductor device asclaimed in claim 1, wherein materials of the dielectric film comprise anepoxy resin and a filler.
 7. The manufacturing method of thesemiconductor device as claimed in claim 1, further comprising: mountingthe thinned semiconductor wafer on a frame carrier before thesingularization process is performed.
 8. A manufacturing method of asemiconductor package, comprising: providing a semiconductor waferhaving an active side and a back side opposite to the active side;providing a plurality of conductive bumps on the active side; laminatinga protection film on the active side, wherein the protection filmcomprises a dielectric film surrounding the plurality of conductivebumps and a cover film covering the dielectric film; performing athinning process on the back side of the semiconductor wafer having theprotection film laminated thereon to form a thinned semiconductor wafer;removing the cover film from the dielectric film on the thinnedsemiconductor wafer; performing a singularization process on the thinnedsemiconductor wafer with the uncovered dielectric film to form aplurality of semiconductor devices, wherein a top surface of theuncovered dielectric film is levelled with top surfaces of the pluralityof conductive bumps; disposing one of the plurality of semiconductordevices on a carrier; providing an encapsulating material on the carrierto encapsulate the one of the plurality of semiconductor devices;providing a redistribution structure over the encapsulating material,wherein the redistribution structure is electrically connected to theone of the plurality of semiconductor devices; and removing the carrier.9. The manufacturing method of the semiconductor package as claimed inclaim 8, further comprising: performing a curing process on theprotection film after the protection film is laminated on the activeside.
 10. The manufacturing method of the semiconductor package asclaimed in claim 9, wherein a temperature of the curing process issubstantially below 200° C.
 11. The manufacturing method of thesemiconductor package as claimed in claim 8, wherein laminating theprotection film on the active side comprises: laminating the dielectricfilm on the active side for surrounding the plurality of conductivebumps; and laminating a cover film on the dielectric film.
 12. Themanufacturing method of the semiconductor package as claimed in claim 8,wherein the cover film is removed by a peeling process.
 13. Themanufacturing method of the semiconductor package as claimed in claim 8,wherein materials of the dielectric film comprise an epoxy resin and afiller.
 14. The manufacturing method of the semiconductor package asclaimed in claim 8, further comprising: providing a plurality ofconductive pillars on the carrier before the encapsulating material isprovided on the carrier, wherein the encapsulating material encapsulatesthe plurality of conductive pillars.
 15. The manufacturing method of thesemiconductor device as claimed in claim 8, further comprising: mountingthe thinned semiconductor wafer on a frame carrier before thesingularization process is performed.
 16. A manufacturing method of asemiconductor device, comprising: forming a plurality of conductivebumps on a semiconductor wafer, laminating a dielectric film on thesemiconductor wafer so as to embed the plurality of conductive bumpsinto the dielectric film, the dielectric film comprising B-stage epoxyand fillers and covering top surfaces of the plurality of conductivebumps; laminating a cover film on the dielectric film; curing thedielectric film laminated on the semiconductor wafer, at a temperaturein a range from 130 to 200° C., wherein the cured dielectric filmextends on and directly contacts the top surfaces of the plurality ofconductive bumps; thinning the semiconductor wafer by removing materialfrom a side of the semiconductor wafer opposite with respect to thecured dielectric film; removing the cover film from the cured dielectricfilm on the thinned semiconductor wafer; and dicing the thinnedsemiconductor wafer with the cured dielectric film to form a pluralityof semiconductor devices.
 17. The manufacturing method of claim 16,wherein a percentage of the filler in the dielectric film is from 50% to80%.
 18. The manufacturing method of claim 16, wherein the dielectricfilm and the cover film are bonded together and laminated on thesemiconductor wafer simultaneously.
 19. The manufacturing method ofclaim 16, wherein the cured dielectric film includes a plurality ofnano-bubbles.
 20. The manufacturing method of claim 19, whereindiameters of the nano-bubbles are in a range from 10 nm to 100 nm.